Yoyok Cahyono, Darminto, Darminto : Reduced Energy Bandgap of a-Si:H Films Deposited by PECVD at Elevating Temperatures

Drs. Yoyok Cahyono M.Si.
Prof. Dr. Drs. Darminto M.Sc
Prof. Dr. Drs. Darminto M.Sc

Year

-

Published in

THE 6th INTERNATIONAL CONFERENCE ON THEORETICAL AND APPLIED PHYSICS (ICTAP-2016)

External link

Type

Seminar Internasional

Keywords

a-Si:H, film, bandgap, temperature


Abstract

The hydrogenated amorphous silicon (a-Si:H) films with the thickness of several hundreds nanometer have succesfully been grown on the glass substrates by plasma enhanced (PE) chemical vapor deposition (CVD), employing SiH4 gas with H2 dilution. The deposition temperatures being set from 150oC up to 250oC was intended to induce nanocrystalline clusters in the amorphous structure, to reduce dangling bond and to recover defect states in the gap, in order to obtain films with reduced energy band gap. The X-ray diffractometry, UV-Vis spectrometric and atomic force microscopic examinations were conducted to structurally studies of films. The reduction of energy bandgap from 1.89 eV down to 1.03 eV were obtained from the deposited films..